PART |
Description |
Maker |
UPA1952 UPA1952TE UPA1952TE-T2 UPA1952TE-T1 |
Pch enhancement-type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
UPA1814GR-9JG-E1 UPA1814GR-9JG-E2 |
Pch enhancement type MOS FET
|
NEC
|
UPA1914TE-T2 |
Pch enhancement type MOS FET
|
NEC
|
2SJ559 2SJ559-T1 |
Pch enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
UPA1731G-E1 UPA1731G-E2 |
Pch enhancement type power MOS FET
|
NEC
|
UPA1730G-E1 UPA1730TP-E2 UPA1730TP-E1 UPA1730G-E2 |
Pch enhancement type power MOS FET
|
NEC
|
UPA1816 UPA1816GR-9JG UPA1816GR-9JG-E2 UPA1816GR-9 |
Pch enhancement MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING CONNECTOR ACCESSORY
|
NEC Corp.
|
UPA2730TP UPA2730TP-AZ UPA2730TP-E2 UPA2730TP-E1 |
Pch enhancement-type MOS FET SWITCHING P-CHANNEL POWER MOSFET SWITCHING N- AND P-CHANNEL POWER MOS FET 42000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, HSOP-8
|
NEC[NEC]
|
2SJ624 2SJ624-T1B 2SJ624-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管 MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
|
NEC, Corp. NEC[NEC]
|
UPA1855 UPA1855GR-9JG |
Nch enhancement type MOS FET MOS FIELD EFFECT TRANSISTOR
|
NEC
|
UPA1970TE UPA1970TE-T2 |
Nch enhancement type MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
UPA1723G-E1 UPA1723G-E2 |
N-channel enhancement type power MOS FET
|
NEC
|